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DMG3415UFY4
0.08
0.08
0.07
0.06
0.07
0.06
V GS = 4.5V
T A = 150°C
0.05
V GS = 2.5V
0.05
T A = 125°C
0.04
0.04
T A = 85°C
0.03
V GS = 4.5V
0.03
T A = 25°C
T A = -55°C
0.02
0.01
0
0.02
0.01
0
0
4 8 12 16
20
0
4
8 12 16
20
1.6
I D , DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.08
I D , DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
0.07
1.4
0.06
1.2
0.05
0.04
V GS = 2.5V
I D = 5A
1.0
V GS = 4.5V
I D = 10A
0.03
V GS = 4.5V
I D = 10A
0.02
0.8
V GS = 2.5V
0.6
I D = 5A
0.01
0
-50
-25 0 25 50 75 100 125 150
-50
-25 0 25 50 75 100 125 150
1.2
T A , AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
20
T A , AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
18
16
0.9
14
12
0.6
I D = 1mA
10
I D = 250μA
8
T A = 25°C
6
0.3
4
2
0
0
-50 -25 0 25 50 75 100 125 150
T A , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0.2
0.4 0.6 0.8 1
V SD , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
DMG3415UFY4
Document number: DS31842 Rev. 4 - 2
3 of 6
www.diodes.com
December 2009
? Diodes Incorporated
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